35A (Tj) Single FETs, MOSFETs

Results: 4
Manufacturer
Micro Commercial CoonsemiSanyo
Packaging
BulkTape & Reel (TR)
Product Status
ActiveObsolete
FET Type
-N-Channel
Technology
-MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
17.1mOhm @ 20A, 10V-
Vgs(th) (Max) @ Id
4V @ 250µA-
Power Dissipation (Max)
35W-
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
ATPAKDFN5060
Package / Case
8-PowerTDFNATPAK (2 leads+tab)ATPAK (2 Leads+Tab)
Stocking Options
Environmental Options
Media
Marketplace Product
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Showing
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
N-CHANNEL MOSFET
ATP201-V-TL-H
N-CHANNEL MOSFET
Sanyo
114,000
Marketplace
Unavailable
Unavailable in your selected currency
-
Bulk
Active
-
-
-
35A (Tj)
-
-
-
-
-
-
-
150°C (TJ)
Surface Mount
ATPAK
ATPAK (2 leads+tab)
ATPAK
ATP201-V-TL-H
MOSFET N-CH 30V 35A ATPAK
onsemi
0
In Stock
60,000
Marketplace
Obsolete
-
Tape & Reel (TR)
Bulk
Obsolete
-
-
-
35A (Tj)
-
-
-
-
-
-
-
150°C (TJ)
Surface Mount
ATPAK
ATPAK (2 Leads+Tab)
ATPAK
ATP212-S-TL-H
MOSFET N-CH 60V 35A ATPAK
onsemi
0
In Stock
Obsolete
-
Tape & Reel (TR)
Obsolete
-
-
-
35A (Tj)
-
-
-
-
-
-
-
150°C (TJ)
Surface Mount
ATPAK
ATPAK (2 Leads+Tab)
DFN5060
MCAC35N10Y-TP
MOSFET N-CH 100V 35A DFN5060
Micro Commercial Co
0
In Stock
Obsolete
-
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
100 V
35A (Tj)
17.1mOhm @ 20A, 10V
4V @ 250µA
25 nC @ 10 V
±20V
1223 pF @ 50 V
-
35W
-55°C ~ 150°C (TJ)
Surface Mount
DFN5060
8-PowerTDFN
Showing
of 4

35A (Tj) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.