34.5A (Ta), 85A (Tc) Single FETs, MOSFETs

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Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
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545
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1 : ¥13.46000
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3,000 : ¥5.71145
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N-Channel
MOSFET (Metal Oxide)
60 V
34.5A (Ta), 85A (Tc)
4.5V, 10V
2.9mOhm @ 20A, 10V
2.4V @ 250µA
75 nC @ 10 V
±20V
3310 pF @ 30 V
-
6.2W (Ta), 78W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (5x6)
8-PowerSMD, Flat Leads
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3,000 : ¥5.71145
Tape & Reel (TR)
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
60 V
34.5A (Ta), 85A (Tc)
4.5V, 10V
2.9mOhm @ 20A, 10V
2.4V @ 250µA
75 nC @ 10 V
±20V
3310 pF @ 30 V
-
6.2W (Ta), 78W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (5x6)
8-PowerSMD, Flat Leads
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34.5A (Ta), 85A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.