30A Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesMicro Commercial Coonsemi
Series
-CoolSiC™OptiMOS®
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
60 V500 V1200 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V-
Rds On (Max) @ Id, Vgs
23mOhm @ 30A, 10V55mOhm @ 20A, 10V150mOhm @ 15A, 10V-
Vgs(th) (Max) @ Id
2.2V @ 11µA2.7V @ 250µA4V @ 250µA-
Gate Charge (Qg) (Max) @ Vgs
7 nC @ 4.5 V19.3 nC @ 10 V350 nC @ 10 V
Vgs (Max)
±20V-
Input Capacitance (Ciss) (Max) @ Vds
1050 pF @ 30 V1200 pF @ 30 V10080 pF @ 25 V
Power Dissipation (Max)
36W72W (Tj)300W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TO220-3PG-TO263-7-12TO-252 (DPAK)TO-264
Package / Case
TO-220-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-8, D2PAK (7 Leads + Tab), TO-263CATO-264-3, TO-264AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
MBRD6100CT-TP
MCU30P06Y-TP
P-CHANNEL MOSFET, DPAK
Micro Commercial Co
3,771
In Stock
1 : ¥7.47000
Cut Tape (CT)
2,500 : ¥3.09674
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
30A
4.5V, 10V
55mOhm @ 20A, 10V
2.7V @ 250µA
19.3 nC @ 10 V
±20V
1050 pF @ 30 V
-
72W (Tj)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
961
In Stock
1 : ¥87.84000
Cut Tape (CT)
1,000 : ¥55.64187
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
30A
-
-
-
-
-
-
-
-
-55°C ~ 175°C
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
1,500
Marketplace
Unavailable
Unavailable in your selected currency
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
60 V
30A
4.5V, 10V
23mOhm @ 30A, 10V
2.2V @ 11µA
7 nC @ 4.5 V
±20V
1200 pF @ 30 V
-
36W
-55°C ~ 175°C
-
-
Through Hole
PG-TO220-3
TO-220-3
N-CHANNEL  POWER MOSFET
MTY30N50E
N-CHANNEL POWER MOSFET
onsemi
7,932
Marketplace
Unavailable
Unavailable in your selected currency
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
500 V
30A
10V
150mOhm @ 15A, 10V
4V @ 250µA
350 nC @ 10 V
±20V
10080 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-264
TO-264-3, TO-264AA
Showing
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30A Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.