27A (Ta), 92A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRF6603 MOSFET N-CH 30V 27A DIRECTFET Infineon Technologies	0 In Stock	4,800 : ¥12.39680 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	27A (Ta), 92A (Tc)	4.5V, 10V	3.4mOhm @ 25A, 10V	2.5V @ 250µA	72 nC @ 4.5 V	+20V, -12V	6590 pF @ 15 V	-	3.6W (Ta), 42W (Tc)	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET™ MT	DirectFET™ Isometric MT
IRF6603TR1 MOSFET N-CH 30V 27A DIRECTFET Infineon Technologies	0 In Stock	1,000 : ¥13.72277 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	27A (Ta), 92A (Tc)	4.5V, 10V	3.4mOhm @ 25A, 10V	2.5V @ 250µA	72 nC @ 4.5 V	+20V, -12V	6590 pF @ 15 V	-	3.6W (Ta), 42W (Tc)	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET™ MT	DirectFET™ Isometric MT

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.