Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesTexas Instruments
Series
NexFET™OptiMOS™ 6
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Current - Continuous Drain (Id) @ 25°C
23A (Ta), 192A (Tc)150A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V8V, 10V
Rds On (Max) @ Id, Vgs
2.7mOhm @ 50A, 10V3.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.3V @ 116µA3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
72.5 nC @ 10 V101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
5500 pF @ 50 V7930 pF @ 50 V
Power Dissipation (Max)
3W (Ta), 217W (Tc)300W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TDSON-8 FLTO-220-3
Package / Case
8-PowerTDFNTO-220-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
9,322
In Stock
1 : ¥29.23000
Cut Tape (CT)
5,000 : ¥13.63291
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
23A (Ta), 192A (Tc)
8V, 10V
2.7mOhm @ 50A, 10V
3.3V @ 116µA
72.5 nC @ 10 V
±20V
5500 pF @ 50 V
-
3W (Ta), 217W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8 FL
8-PowerTDFN
TO-220-3
CSD19535KCS
MOSFET N-CH 100V 150A TO220-3
Texas Instruments
458
In Stock
1 : ¥26.60000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
150A (Ta)
6V, 10V
3.6mOhm @ 100A, 10V
3.4V @ 250µA
101 nC @ 10 V
±20V
7930 pF @ 50 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.