Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon Technologiesonsemi
Series
-OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
60 V200 V
Current - Continuous Drain (Id) @ 25°C
310mA (Ta)11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
125mOhm @ 5.7A, 10V1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
24.5 pF @ 20 V680 pF @ 100 V
Power Dissipation (Max)
280mW (Tj)50W (Tc)
Supplier Device Package
PG-TDSON-8-5SC-70-3 (SOT323)
Package / Case
8-PowerTDFNSC-70, SOT-323
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SC-70-3
2N7002WT1G
MOSFET N-CH 60V 310MA SC70-3
onsemi
18,567
In Stock
1 : ¥1.72000
Cut Tape (CT)
3,000 : ¥0.28770
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
310mA (Ta)
4.5V, 10V
1.6Ohm @ 500mA, 10V
2.5V @ 250µA
0.7 nC @ 4.5 V
±20V
24.5 pF @ 20 V
-
280mW (Tj)
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-3 (SOT323)
SC-70, SOT-323
8-Power TDFN
BSC12DN20NS3GATMA1
MOSFET N-CH 200V 11.3A 8TDSON
Infineon Technologies
10,212
In Stock
1 : ¥11.41000
Cut Tape (CT)
5,000 : ¥4.48534
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
11.3A (Tc)
10V
125mOhm @ 5.7A, 10V
4V @ 25µA
8.7 nC @ 10 V
±20V
680 pF @ 100 V
-
50W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-5
8-PowerTDFN
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.