Single FETs, MOSFETs

Results: 2
Series
HiPerFET™, PolarPolarHT™
Drain to Source Voltage (Vdss)
300 V900 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)36A (Tc)
Rds On (Max) @ Id, Vgs
110mOhm @ 18A, 10V900mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2250 pF @ 25 V3080 pF @ 25 V
Power Dissipation (Max)
300W (Tc)380W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
TO-247AD (IXFH)TO-263AA
Package / Case
TO-247-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-263AB
IXTA36N30P
MOSFET N-CH 300V 36A TO263
Littelfuse Inc.
1,273
In Stock
1 : ¥40.56000
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N-Channel
MOSFET (Metal Oxide)
300 V
36A (Tc)
10V
110mOhm @ 18A, 10V
5.5V @ 250µA
70 nC @ 10 V
±30V
2250 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-247_IXFH
IXFH12N90P
MOSFET N-CH 900V 12A TO247AD
Littelfuse Inc.
1,149
In Stock
900
Factory
1 : ¥56.40000
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N-Channel
MOSFET (Metal Oxide)
900 V
12A (Tc)
10V
900mOhm @ 6A, 10V
6.5V @ 1mA
56 nC @ 10 V
±30V
3080 pF @ 25 V
-
380W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.