Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesNexperia USA Inc.
Series
OptiMOS™TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
100 V200 V
Current - Continuous Drain (Id) @ 25°C
150mA (Ta)35A (Tc)
Rds On (Max) @ Id, Vgs
35mOhm @ 35A, 10V6Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id
2.8V @ 1mA4V @ 90µA
Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 25 V2410 pF @ 100 V
Power Dissipation (Max)
250mW (Ta)150W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-TDSON-8-1TO-236AB
Package / Case
8-PowerTDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
BSS123,215
MOSFET N-CH 100V 150MA TO236AB
Nexperia USA Inc.
269,650
In Stock
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.37730
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
100 V
150mA (Ta)
10V
6Ohm @ 120mA, 10V
2.8V @ 1mA
-
±20V
40 pF @ 25 V
-
250mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
PG-TDSON-8-1
BSC350N20NSFDATMA1
MOSFET N-CH 200V 35A TDSON-8-1
Infineon Technologies
10,084
In Stock
1 : ¥24.14000
Cut Tape (CT)
5,000 : ¥11.26590
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
35A (Tc)
10V
35mOhm @ 35A, 10V
4V @ 90µA
30 nC @ 10 V
±20V
2410 pF @ 100 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.