Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRF1405PBF MOSFET N-CH 55V 169A TO220AB Infineon Technologies	13,015 In Stock	1 : ¥14.61000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	169A (Tc)	10V	5.3mOhm @ 101A, 10V	4V @ 250µA	260 nC @ 10 V	±20V	5480 pF @ 25 V	-	330W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF1405STRLPBF MOSFET N-CH 55V 131A D2PAK Infineon Technologies	2,685 In Stock	1 : ¥21.51000 Cut Tape (CT) 800 : ¥12.00971 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	55 V	131A (Tc)	10V	5.3mOhm @ 101A, 10V	4V @ 250µA	260 nC @ 10 V	±20V	5480 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.