Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRLML2803TRPBF MOSFET N-CH 30V 1.2A SOT23 Infineon Technologies	132,979 In Stock	1 : ¥3.61000 Cut Tape (CT) 3,000 : ¥0.80297 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	1.2A (Ta)	4.5V, 10V	250mOhm @ 910mA, 10V	1V @ 250µA	5 nC @ 10 V	±20V	85 pF @ 25 V	-	540mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	Micro3™/SOT-23	TO-236-3, SC-59, SOT-23-3
IRFR220NTRPBF MOSFET N-CH 200V 5A DPAK Infineon Technologies	10,340 In Stock	1 : ¥7.72000 Cut Tape (CT) 2,000 : ¥2.93390 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	200 V	5A (Tc)	10V	600mOhm @ 2.9A, 10V	4V @ 250µA	23 nC @ 10 V	±20V	300 pF @ 25 V	-	43W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
TPH1500CNH,L1Q MOSFET N-CH 150V 38A 8SOP Toshiba Semiconductor and Storage	12,408 In Stock	1 : ¥15.11000 Cut Tape (CT) 5,000 : ¥6.57037 Tape & Reel (TR)	U-MOSVIII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	38A (Tc)	10V	15.4mOhm @ 19A, 10V	4V @ 1mA	22 nC @ 10 V	±20V	2200 pF @ 75 V	-	1.6W (Ta), 78W (Tc)	150°C	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
IRFR220TRPBF MOSFET N-CH 200V 4.8A DPAK Vishay Siliconix	15,337 In Stock	1 : ¥7.39000 Cut Tape (CT) 2,000 : ¥3.05146 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	200 V	4.8A (Tc)	10V	800mOhm @ 2.9A, 10V	4V @ 250µA	14 nC @ 10 V	±20V	260 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFL110TRPBF MOSFET N-CH 100V 1.5A SOT223 Vishay Siliconix	6,621 In Stock	1 : ¥7.39000 Cut Tape (CT) 2,500 : ¥2.80394 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	1.5A (Tc)	10V	540mOhm @ 900mA, 10V	4V @ 250µA	8.3 nC @ 10 V	±20V	180 pF @ 25 V	-	2W (Ta), 3.1W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IRFI740GPBF MOSFET N-CH 400V 5.4A TO220-3 Vishay Siliconix	4,686 In Stock	1 : ¥16.26000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	400 V	5.4A (Tc)	10V	550mOhm @ 3.2A, 10V	4V @ 250µA	66 nC @ 10 V	±20V	1370 pF @ 25 V	-	40W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.