Single FETs, MOSFETs

Results: 6
Manufacturer
Diodes IncorporatedInfineon TechnologiesVishay Siliconix
Series
-SIPMOS®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveLast Time Buy
Drain to Source Voltage (Vdss)
60 V100 V150 V400 V
Current - Continuous Drain (Id) @ 25°C
115mA (Ta)170mA (Ta)1.8A (Ta)3A (Ta)3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
85mOhm @ 3.5A, 10V300mOhm @ 1.8A, 10V1.8Ohm @ 1.9A, 10V6Ohm @ 170mA, 10V7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1.8V @ 400µA2V @ 1mA2.5V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V20 nC @ 10 V21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V60 pF @ 25 V350 pF @ 25 V368 pF @ 25 V
Power Dissipation (Max)
200mW (Ta)1.8W (Ta)1.9W (Ta)2.5W (Ta), 42W (Tc)42W (Tc)
Supplier Device Package
DPAKPG-SOT223-4PowerPAK® SO-8SOT-323TO-236
Package / Case
PowerPAK® SO-8SC-70, SOT-323TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-323
BSS123WQ-7-F
MOSFET N-CH 100V 170MA SOT323
Diodes Incorporated
226,560
In Stock
1 : ¥2.79000
Cut Tape (CT)
3,000 : ¥0.46763
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
170mA (Ta)
4.5V, 10V
6Ohm @ 170mA, 10V
2V @ 1mA
-
±20V
60 pF @ 25 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
PowerPAK SO-8
SI7898DP-T1-GE3
MOSFET N-CH 150V 3A PPAK SO-8
Vishay Siliconix
12,851
In Stock
1 : ¥17.65000
Cut Tape (CT)
3,000 : ¥7.94033
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
3A (Ta)
6V, 10V
85mOhm @ 3.5A, 10V
4V @ 250µA
21 nC @ 10 V
±20V
-
-
1.9W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SOT-23-3
2N7002-T1-E3
MOSFET N-CH 60V 115MA TO236
Vishay Siliconix
4,987
In Stock
1 : ¥5.09000
Cut Tape (CT)
3,000 : ¥1.71229
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Ta)
5V, 10V
7.5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236
TO-236-3, SC-59, SOT-23-3
D-PAK (TO-252AA)
IRFR320TRPBF
MOSFET N-CH 400V 3.1A DPAK
Vishay Siliconix
8,135
In Stock
1 : ¥10.18000
Cut Tape (CT)
2,000 : ¥4.20256
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
400 V
3.1A (Tc)
10V
1.8Ohm @ 1.9A, 10V
4V @ 250µA
20 nC @ 10 V
±20V
350 pF @ 25 V
-
2.5W (Ta), 42W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
SOT-223-4
BSP295H6327XTSA1
MOSFET N-CH 60V 1.8A SOT223-4
Infineon Technologies
1,096
In Stock
1 : ¥7.64000
Cut Tape (CT)
1,000 : ¥3.26233
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
1.8A (Ta)
4.5V, 10V
300mOhm @ 1.8A, 10V
1.8V @ 400µA
17 nC @ 10 V
±20V
368 pF @ 25 V
-
1.8W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
D-PAK (TO-252AA)
IRFR320TRLPBF
MOSFET N-CH 400V 3.1A DPAK
Vishay Siliconix
0
In Stock
Check Lead Time
1 : ¥14.04000
Cut Tape (CT)
3,000 : ¥6.31917
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
400 V
3.1A (Tc)
10V
1.8Ohm @ 1.9A, 10V
4V @ 250µA
20 nC @ 10 V
±20V
350 pF @ 25 V
-
42W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.