Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
25 V30 V
Current - Continuous Drain (Id) @ 25°C
5A (Tc)20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
3V, 8V4.5V, 10V
Rds On (Max) @ Id, Vgs
7.3mOhm @ 10A, 10V24mOhm @ 4A, 8V
Vgs(th) (Max) @ Id
1.55V @ 250µA1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.8 nC @ 4.5 V22.2 nC @ 10 V
Vgs (Max)
+10V, -8V±20V
Input Capacitance (Ciss) (Max) @ Vds
340 pF @ 12.5 V1590 pF @ 15 V
Power Dissipation (Max)
2.3W (Ta)3.2W (Ta), 37W (Tc)
Supplier Device Package
6-SON8-VSONP (3x3.3)
Package / Case
6-SMD, Flat Leads8-PowerVDFN
Stocking Options
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
CSD-6-SON Pkg
CSD16301Q2
MOSFET N-CH 25V 5A 6SON
Texas Instruments
20,223
In Stock
1 : ¥3.94000
Cut Tape (CT)
3,000 : ¥1.32358
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
5A (Tc)
3V, 8V
24mOhm @ 4A, 8V
1.55V @ 250µA
2.8 nC @ 4.5 V
+10V, -8V
340 pF @ 12.5 V
-
2.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-SON
6-SMD, Flat Leads
8-VSONP
CSD17578Q3A
MOSFET N-CH 30V 20A 8VSON
Texas Instruments
22,579
In Stock
1 : ¥5.42000
Cut Tape (CT)
2,500 : ¥1.82235
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
20A (Ta)
4.5V, 10V
7.3mOhm @ 10A, 10V
1.9V @ 250µA
22.2 nC @ 10 V
±20V
1590 pF @ 15 V
-
3.2W (Ta), 37W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSONP (3x3.3)
8-PowerVDFN
Showing
of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.