Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

ZVP1320FTA MOSFET P-CH 200V 35MA SOT23-3 Diodes Incorporated	40,881 In Stock 411,000 Factory	1 : ¥4.43000 Cut Tape (CT) 3,000 : ¥1.50478 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	200 V	35mA (Ta)	10V	80Ohm @ 50mA, 10V	3.5V @ 1mA	-	±20V	50 pF @ 25 V	-	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
BSC350N20NSFDATMA1 MOSFET N-CH 200V 35A TDSON-8-1 Infineon Technologies	10,594 In Stock	1 : ¥24.14000 Cut Tape (CT) 5,000 : ¥11.26590 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	200 V	35A (Tc)	10V	35mOhm @ 35A, 10V	4V @ 90µA	30 nC @ 10 V	±20V	2410 pF @ 100 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-1	8-PowerTDFN
IPP320N20N3GXKSA1 MOSFET N-CH 200V 34A TO220-3 Infineon Technologies	5,159 In Stock	1 : ¥27.26000 Tube	OptiMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	34A (Tc)	10V	32mOhm @ 34A, 10V	4V @ 90µA	29 nC @ 10 V	±20V	2350 pF @ 100 V	-	136W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
IRF7241TRPBF MOSFET P-CH 40V 6.2A 8SO Infineon Technologies	14,344 In Stock	1 : ¥7.55000 Cut Tape (CT) 4,000 : ¥2.86420 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	6.2A (Ta)	4.5V, 10V	41mOhm @ 6.2A, 10V	3V @ 250µA	80 nC @ 10 V	±20V	3220 pF @ 25 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
G3R350MT12J SIC MOSFET N-CH 11A TO263-7 GeneSiC Semiconductor	3,649 In Stock	1 : ¥45.24000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	11A (Tc)	15V	420mOhm @ 4A, 15V	2.69V @ 2mA	12 nC @ 15 V	±15V	334 pF @ 800 V	-	75W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IXTP44P15T MOSFET P-CH 150V 44A TO220AB Littelfuse Inc.	5 In Stock	1 : ¥49.92000 Tube	TrenchP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	150 V	44A (Tc)	10V	65mOhm @ 500mA, 10V	4V @ 250µA	175 nC @ 10 V	±15V	13400 pF @ 25 V	-	298W (Tc)	-	Through Hole	TO-220-3	TO-220-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.