Single FETs, MOSFETs

Results: 10
Manufacturer
Diodes IncorporatedLittelfuse Inc.Microchip TechnologySTMicroelectronicsTorex Semiconductor LtdVishay Siliconix
Series
-STripFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V40 V200 V220 V240 V250 V
Current - Continuous Drain (Id) @ 25°C
35mA (Ta)120mA (Tj)240mA (Ta)320mA (Ta)360mA (Ta)480mA (Ta)2.5A (Ta)3.3A (Ta)15A (Tc)18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
0V2.4V, 10V2.5V, 4.5V3V, 5V3.3V, 10V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
33mOhm @ 4.4A, 10V125mOhm @ 10A, 10V170mOhm @ 1.5A, 4.5V280mOhm @ 9A, 10V3.5Ohm @ 300mA, 10V4Ohm @ 200mA, 0V8.5Ohm @ 500mA, 10V10Ohm @ 250mA, 5V12Ohm @ 200mA, 10V80Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 1mA1.8V @ 1mA2.2V @ 250µA2.4V @ 1mA2.5V @ 250µA3.5V @ 1mA4V @ 250µA-
Gate Charge (Qg) (Max) @ Vgs
3.65 nC @ 10 V6.6 nC @ 10 V23.2 nC @ 10 V39 nC @ 10 V63 nC @ 10 V
Vgs (Max)
±12V±15V±20V±40V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V72 pF @ 25 V85 pF @ 25 V110 pF @ 25 V188 pF @ 25 V310 pF @ 10 V350 pF @ 25 V940 pF @ 25 V1382 pF @ 20 V1400 pF @ 25 V
FET Feature
-Depletion Mode
Power Dissipation (Max)
350mW (Ta)360mW (Ta)700mW (Ta)760mW (Ta)1.1W (Ta)1.2W (Ta)2W (Ta)110W (Tc)150W (Tc)
Operating Temperature
-55°C ~ 125°C (TA)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
DPAKSOT-223-3SOT-23-3SOT-89SOT-89-3TO-236AB (SOT23)TO-247ACU-DFN2020-6 (Type E)
Package / Case
6-PowerUDFNTO-236-3, SC-59, SOT-23-3TO-243AATO-247-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
U-DFN2020-6 Type E
DMP4047LFDE-7
MOSFET P-CH 40V 3.3A 6UDFN
Diodes Incorporated
20,251
In Stock
1 : ¥4.27000
Cut Tape (CT)
3,000 : ¥1.43357
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
3.3A (Ta)
4.5V, 10V
33mOhm @ 4.4A, 10V
2.2V @ 250µA
23.2 nC @ 10 V
±20V
1382 pF @ 20 V
-
700mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type E)
6-PowerUDFN
SOT-23-3
ZVP1320FTA
MOSFET P-CH 200V 35MA SOT23-3
Diodes Incorporated
40,881
In Stock
411,000
Factory
1 : ¥4.43000
Cut Tape (CT)
3,000 : ¥1.50478
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
200 V
35mA (Ta)
10V
80Ohm @ 50mA, 10V
3.5V @ 1mA
-
±20V
50 pF @ 25 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
CPC3703CTR
CPC3703CTR
MOSFET N-CH 250V 360MA SOT89-3
Littelfuse Inc.
9,768
In Stock
1 : ¥7.72000
Cut Tape (CT)
1,000 : ¥3.27694
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
250 V
360mA (Ta)
0V
4Ohm @ 200mA, 0V
-
-
±15V
350 pF @ 25 V
Depletion Mode
1.1W (Ta)
-55°C ~ 125°C (TA)
Surface Mount
SOT-89-3
TO-243AA
SOT-23-3
DMN24H3D5L-7
MOSFET N-CH 240V 480MA SOT23
Diodes Incorporated
5,887
In Stock
432,000
Factory
1 : ¥4.43000
Cut Tape (CT)
3,000 : ¥1.49528
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
240 V
480mA (Ta)
3.3V, 10V
3.5Ohm @ 300mA, 10V
2.5V @ 250µA
6.6 nC @ 10 V
±20V
188 pF @ 25 V
-
760mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT23 PKG
TP5322K1-G
MOSFET P-CH 220V 120MA TO236AB
Microchip Technology
5,227
In Stock
1 : ¥6.16000
Cut Tape (CT)
3,000 : ¥4.59749
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
220 V
120mA (Tj)
4.5V, 10V
12Ohm @ 200mA, 10V
2.4V @ 1mA
-
±20V
110 pF @ 25 V
-
360mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB (SOT23)
TO-236-3, SC-59, SOT-23-3
SOT-89
XP162A12A6PR-G
MOSFET P-CH 20V 2.5A SOT89
Torex Semiconductor Ltd
8,189
In Stock
1 : ¥6.65000
Cut Tape (CT)
1,000 : ¥2.82590
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
2.5A (Ta)
2.5V, 4.5V
170mOhm @ 1.5A, 4.5V
-
-
±12V
310 pF @ 10 V
-
2W (Ta)
150°C (TJ)
Surface Mount
SOT-89
TO-243AA
AP7387Q-30Y-13
ZVN4525ZTA
MOSFET N-CH 250V 240MA SOT89-3
Diodes Incorporated
5,848
In Stock
23,000
Factory
1 : ¥6.98000
Cut Tape (CT)
1,000 : ¥2.97367
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
250 V
240mA (Ta)
2.4V, 10V
8.5Ohm @ 500mA, 10V
1.8V @ 1mA
3.65 nC @ 10 V
±40V
72 pF @ 25 V
-
1.2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-89-3
TO-243AA
SOT-223-3
ZVNL120GTA
MOSFET N-CH 200V 320MA SOT223
Diodes Incorporated
7,427
In Stock
76,000
Factory
1 : ¥7.55000
Cut Tape (CT)
1,000 : ¥3.21053
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
N-Channel
MOSFET (Metal Oxide)
200 V
320mA (Ta)
3V, 5V
10Ohm @ 250mA, 5V
1.5V @ 1mA
-
±20V
85 pF @ 25 V
-
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-3
TO-261-4, TO-261AA
MFG_DPAK(TO252-3)
STD20NF20
MOSFET N-CH 200V 18A DPAK
STMicroelectronics
2,727
In Stock
1 : ¥18.14000
Cut Tape (CT)
2,500 : ¥8.18626
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
18A (Tc)
10V
125mOhm @ 10A, 10V
4V @ 250µA
39 nC @ 10 V
±20V
940 pF @ 25 V
-
110W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-247-3 AC EP
IRFP244PBF
MOSFET N-CH 250V 15A TO247-3
Vishay Siliconix
4,108
In Stock
1 : ¥29.47000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
15A (Tc)
10V
280mOhm @ 9A, 10V
4V @ 250µA
63 nC @ 10 V
±20V
1400 pF @ 25 V
-
150W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.