Single FETs, MOSFETs

Results: 2
Manufacturer
Nexperia USA Inc.Rohm Semiconductor
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
3.5A (Ta)6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
20mOhm @ 6.8A, 4.5V50mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
900mV @ 250µA2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V20.2 nC @ 4.5 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
475 pF @ 15 V1240 pF @ 10 V
Power Dissipation (Max)
510mW (Ta), 6.94W (Tc)1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
TO-236ABTSMT3
Package / Case
SC-96TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TSMT3
RQ5E035ATTCL
MOSFET P-CH 30V 3.5A TSMT3
Rohm Semiconductor
112,881
In Stock
1 : ¥2.30000
Cut Tape (CT)
3,000 : ¥0.69783
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
3.5A (Ta)
4.5V, 10V
50mOhm @ 3.5A, 10V
2.5V @ 1mA
10 nC @ 10 V
±20V
475 pF @ 15 V
-
1W (Ta)
150°C (TJ)
Surface Mount
TSMT3
SC-96
TO-236AB
PMV16XNR
MOSFET N-CH 20V 6.8A TO236AB
Nexperia USA Inc.
27,303
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.83707
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
6.8A (Ta)
1.8V, 4.5V
20mOhm @ 6.8A, 4.5V
900mV @ 250µA
20.2 nC @ 4.5 V
±12V
1240 pF @ 10 V
-
510mW (Ta), 6.94W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.