Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon Technologiesonsemi
Series
-HEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
3.3A (Ta)3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 4.5V
Rds On (Max) @ Id, Vgs
60mOhm @ 3.3A, 4.5V63mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 10µA1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.9 nC @ 4.5 V10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
270 pF @ 24 V850 pF @ 10 V
Power Dissipation (Max)
1W (Ta)1.3W (Ta)
Supplier Device Package
Micro3™/SOT-23SC-88/SC70-6/SOT-363
Package / Case
6-TSSOP, SC-88, SOT-363TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
IRLML6346TRPBF
MOSFET N-CH 30V 3.4A SOT23
Infineon Technologies
72,922
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥0.83411
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
3.4A (Ta)
2.5V, 4.5V
63mOhm @ 3.4A, 4.5V
1.1V @ 10µA
2.9 nC @ 4.5 V
±12V
270 pF @ 24 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
SOT-363
NTJS4151PT1G
MOSFET P-CH 20V 3.3A SC88/SC70-6
onsemi
30,576
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.86553
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3.3A (Ta)
1.8V, 4.5V
60mOhm @ 3.3A, 4.5V
1.2V @ 250µA
10 nC @ 4.5 V
±12V
850 pF @ 10 V
-
1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SC-88/SC70-6/SOT-363
6-TSSOP, SC-88, SOT-363
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.