Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SI2301BDS-T1-E3 MOSFET P-CH 20V 2.2A SOT23-3 Vishay Siliconix	24,029 In Stock	1 : ¥3.69000 Cut Tape (CT) 3,000 : ¥0.98884 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	2.2A (Ta)	2.5V, 4.5V	100mOhm @ 2.8A, 4.5V	950mV @ 250µA	10 nC @ 4.5 V	±8V	375 pF @ 6 V	-	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SI2309CDS-T1-GE3 MOSFET P-CH 60V 1.6A SOT23-3 Vishay Siliconix	25,398 In Stock	1 : ¥4.35000 Cut Tape (CT) 3,000 : ¥1.46767 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	1.6A (Tc)	4.5V, 10V	345mOhm @ 1.25A, 10V	3V @ 250µA	4.1 nC @ 4.5 V	±20V	210 pF @ 30 V	-	1W (Ta), 1.7W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
ZXMN3A01E6TA MOSFET N-CH 30V 2.4A SOT-23-6 Diodes Incorporated	138,507 In Stock 171,000 Factory	1 : ¥4.60000 Cut Tape (CT) 3,000 : ¥1.74612 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	2.4A (Ta)	4.5V, 10V	120mOhm @ 2.5A, 10V	1V @ 250µA	3.9 nC @ 10 V	±20V	190 pF @ 25 V	-	1.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.