Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

R6020ENJTL MOSFET N-CH 600V 20A LPTS Rohm Semiconductor	5,841 In Stock	1 : ¥22.00000 Cut Tape (CT) 1,000 : ¥11.38265 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V	196mOhm @ 9.5A, 10V	4V @ 1mA	60 nC @ 10 V	±20V	1400 pF @ 25 V	-	40W (Tc)	150°C (TJ)	Surface Mount	LPTS	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
R6020KNJTL MOSFET N-CH 600V 20A LPTS Rohm Semiconductor	3,499 In Stock	1 : ¥27.58000 Cut Tape (CT) 1,000 : ¥14.24532 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V	196mOhm @ 9.5A, 10V	5V @ 1mA	40 nC @ 10 V	±20V	1550 pF @ 25 V	-	231W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	LPTS	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
STB24N60M2 MOSFET N-CH 600V 18A D2PAK STMicroelectronics	0 In Stock Check Lead Time	1 : ¥22.58000 Cut Tape (CT) 1,000 : ¥11.68025 Tape & Reel (TR)	MDmesh™ II Plus	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	18A (Tc)	10V	190mOhm @ 9A, 10V	4V @ 250µA	29 nC @ 10 V	±25V	1060 pF @ 100 V	-	150W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.