Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

ZVN4424GTA MOSFET N-CH 240V 500MA SOT223 Diodes Incorporated	12,006 In Stock 219,000 Factory	1 : ¥6.32000 Cut Tape (CT) 1,000 : ¥2.70332 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	240 V	500mA (Ta)	2.5V, 10V	5.5Ohm @ 500mA, 10V	1.8V @ 1mA	-	±40V	200 pF @ 25 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-3	TO-261-4, TO-261AA
SSM5N15FU,LF MOSFET N-CH 30V 100MA USV Toshiba Semiconductor and Storage	2,232 In Stock	1 : ¥2.96000 Cut Tape (CT) 3,000 : ¥0.63495 Tape & Reel (TR)	π-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	100mA (Ta)	2.5V, 4V	4Ohm @ 10mA, 4V	-	-	±20V	7.8 pF @ 3 V	-	200mW (Ta)	150°C (TJ)	Surface Mount	5-SSOP	5-TSSOP, SC-70-5, SOT-353
PSMN4R2-60PLQ MOSFET N-CH 60V 130A TO220AB Nexperia USA Inc.	2,193 In Stock	1 : ¥24.88000 Tube	-	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	130A (Tc)	4.5V, 10V	3.9mOhm @ 25A, 10V	2.1V @ 1mA	151 nC @ 10 V	±20V	8533 pF @ 25 V	-	263W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
MSC015SMA070B4 TRANS SJT N-CH 700V 140A TO247-4 Microchip Technology	27 In Stock	1 : ¥302.45000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	700 V	140A (Tc)	20V	19mOhm @ 40A, 20V	2.4V @ 4mA	215 nC @ 20 V	+23V, -10V	4500 pF @ 700 V	-	455W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.