Single FETs, MOSFETs

Results: 4
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITEDDiodes IncorporatedVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V40 V
Current - Continuous Drain (Id) @ 25°C
3A (Ta)4.3A (Ta)4.3A (Tc)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V2.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
0.88mOhm @ 20A, 10V50mOhm @ 6A, 10V51mOhm @ 3.2A, 10V55mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id
1.25V @ 250µA1.5V @ 250µA2.1V @ 250µA2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.81 nC @ 4.5 V11.8 nC @ 10 V13 nC @ 10 V204 nC @ 10 V
Vgs (Max)
±10V±12V+20V, -16V±25V
Input Capacitance (Ciss) (Max) @ Vds
220 pF @ 10 V370 pF @ 20 V642 pF @ 25 V10500 pF @ 20 V
Power Dissipation (Max)
700mW (Ta)960mW (Ta), 1.7W (Tc)1.38W (Ta)104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
PowerPAK® SO-8SOT-23SOT-23-3SOT-23-3 (TO-236)
Package / Case
PowerPAK® SO-8TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMP3056L-7
MOSFET P-CH 30V 4.3A SOT23
Diodes Incorporated
90,544
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.87259
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
4.3A (Ta)
4.5V, 10V
50mOhm @ 6A, 10V
2.1V @ 250µA
11.8 nC @ 10 V
±25V
642 pF @ 25 V
-
1.38W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SI2356DS-T1-GE3
MOSFET N-CH 40V 4.3A TO236
Vishay Siliconix
21,102
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.85907
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
4.3A (Tc)
2.5V, 10V
51mOhm @ 3.2A, 10V
1.5V @ 250µA
13 nC @ 10 V
±12V
370 pF @ 20 V
-
960mW (Ta), 1.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
PowerPAK SO-8
SIR638DP-T1-GE3
MOSFET N-CH 40V 100A PPAK SO-8
Vishay Siliconix
6,186
In Stock
1 : ¥13.05000
Cut Tape (CT)
3,000 : ¥5.90011
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
100A (Tc)
4.5V, 10V
0.88mOhm @ 20A, 10V
2.3V @ 250µA
204 nC @ 10 V
+20V, -16V
10500 pF @ 20 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
AS2302
AS2302
N-CHANNEL ENHANCEMENT MODE MOSFE
ANBON SEMICONDUCTOR (INT'L) LIMITED
19,304
In Stock
1 : ¥1.56000
Cut Tape (CT)
3,000 : ¥0.26581
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
3A (Ta)
2.5V, 4.5V
55mOhm @ 3A, 4.5V
1.25V @ 250µA
3.81 nC @ 4.5 V
±10V
220 pF @ 10 V
-
700mW (Ta)
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
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of 4

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.