Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
HEXFET®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
3.7A (Ta)12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 4.5V
Rds On (Max) @ Id, Vgs
33mOhm @ 5.2A, 4.5V65mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 5 V45 nC @ 8 V
Vgs (Max)
±8V±12V
Input Capacitance (Ciss) (Max) @ Vds
633 pF @ 10 V1300 pF @ 10 V
Power Dissipation (Max)
1.3W (Ta)3.4W (Ta), 17.9W (Tc)
Supplier Device Package
Micro3™/SOT-23PowerPAK® SC-70-6
Package / Case
PowerPAK® SC-70-6TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
Infineon Technologies
155,445
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥1.03881
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3.7A (Ta)
2.5V, 4.5V
65mOhm @ 3.7A, 4.5V
1.2V @ 250µA
12 nC @ 5 V
±12V
633 pF @ 10 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
PowerPak SC-70-6 Single
SIA461DJ-T1-GE3
MOSFET P-CH 20V 12A PPAK SC70-6
Vishay Siliconix
39,250
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.92360
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
12A (Tc)
1.8V, 4.5V
33mOhm @ 5.2A, 4.5V
1V @ 250µA
45 nC @ 8 V
±8V
1300 pF @ 10 V
-
3.4W (Ta), 17.9W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SC-70-6
PowerPAK® SC-70-6
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.