Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedGoford Semiconductor
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
40 V60 V
Current - Continuous Drain (Id) @ 25°C
11.4A (Ta)12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
11mOhm @ 9.8A, 10V30mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
49 nC @ 10 V91 nC @ 10 V
Vgs (Max)
±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
2719 pF @ 30 V4234 pF @ 20 V
Power Dissipation (Max)
1.8W3W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-SOIC8-SOP
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
8 SOIC
DMPH4015SSS-13
MOSFET P-CHANNEL 40V 11.4A 8SO
Diodes Incorporated
9,259
In Stock
12,500
Factory
1 : ¥9.77000
Cut Tape (CT)
2,500 : ¥3.77139
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
11.4A (Ta)
4.5V, 10V
11mOhm @ 9.8A, 10V
2.5V @ 250µA
91 nC @ 10 V
±25V
4234 pF @ 20 V
-
1.8W
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
G06N06S
G300P06S
P-CH,-60V,-12A,RD(MAX)<30M@-10V,
Goford Semiconductor
3,511
In Stock
1 : ¥4.68000
Cut Tape (CT)
4,000 : ¥1.77240
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
12A (Tc)
10V
30mOhm @ 8A, 10V
3V @ 250µA
49 nC @ 10 V
±20V
2719 pF @ 30 V
-
3W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.