Single FETs, MOSFETs

Results: 5
Manufacturer
Infineon TechnologiesLittelfuse Inc.Microchip TechnologyTexas InstrumentsVishay Siliconix
Series
-HEXFET®Linear L2™NexFET™TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveLast Time Buy
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V60 V100 V500 V
Current - Continuous Drain (Id) @ 25°C
630mA (Tj)2.3A (Tc)42A (Tc)50A (Ta)53A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
14.5mOhm @ 10A, 10V18mOhm @ 33A, 10V100mOhm @ 30A, 10V156mOhm @ 1.9A, 10V2Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
2.4V @ 1mA3V @ 250µA3.6V @ 250µA4V @ 250µA4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.8 nC @ 10 V21 nC @ 10 V100 nC @ 10 V610 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
125 pF @ 20 V190 pF @ 30 V1680 pF @ 50 V2930 pF @ 25 V24000 pF @ 25 V
Power Dissipation (Max)
1.09W (Ta), 1.66W (Tc)1.6W (Ta)2.8W (Ta), 83W (Tc)140W (Tc)735W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Chassis MountSurface Mount
Supplier Device Package
8-VSON-CLIP (3.3x3.3)SOT-227BSOT-23-3 (TO-236)TO-243AA (SOT-89)TO-252AA (DPAK)
Package / Case
8-PowerTDFNSOT-227-4, miniBLOCTO-236-3, SC-59, SOT-23-3TO-243AATO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
CSD19537Q3
CSD19537Q3
MOSFET N-CH 100V 9.7A/50A 8VSON
Texas Instruments
4,288
In Stock
1 : ¥9.85000
Cut Tape (CT)
2,500 : ¥4.07428
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
50A (Ta)
6V, 10V
14.5mOhm @ 10A, 10V
3.6V @ 250µA
21 nC @ 10 V
±20V
1680 pF @ 50 V
-
2.8W (Ta), 83W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON-CLIP (3.3x3.3)
8-PowerTDFN
TO252-3
IRFR3710ZTRPBF
MOSFET N-CH 100V 42A DPAK
Infineon Technologies
11,612
In Stock
1 : ¥13.05000
Cut Tape (CT)
2,000 : ¥5.89989
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
42A (Tc)
10V
18mOhm @ 33A, 10V
4V @ 250µA
100 nC @ 10 V
±20V
2930 pF @ 25 V
-
140W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
IXYK1x0xNxxxx
IXTN60N50L2
MOSFET N-CH 500V 53A SOT227B
Littelfuse Inc.
603
In Stock
1 : ¥413.27000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
53A (Tc)
10V
100mOhm @ 30A, 10V
4.5V @ 250µA
610 nC @ 10 V
±30V
24000 pF @ 25 V
-
735W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
C04-029 MB
TP2502N8-G
MOSFET P-CH 20V 630MA TO243AA
Microchip Technology
1,197
In Stock
1 : ¥13.96000
Cut Tape (CT)
2,000 : ¥10.59031
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
630mA (Tj)
5V, 10V
2Ohm @ 1A, 10V
2.4V @ 1mA
-
±20V
125 pF @ 20 V
-
1.6W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA (SOT-89)
TO-243AA
SOT-23-3
SI2308BDS-T1-GE3
MOSFET N-CH 60V 2.3A SOT23-3
Vishay Siliconix
25,893
In Stock
1 : ¥6.73000
Cut Tape (CT)
3,000 : ¥1.59412
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
60 V
2.3A (Tc)
4.5V, 10V
156mOhm @ 1.9A, 10V
3V @ 250µA
6.8 nC @ 10 V
±20V
190 pF @ 30 V
-
1.09W (Ta), 1.66W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.