Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
4.6A (Ta), 16A (Tc)10A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs
12.4mOhm @ 10A, 10V51mOhm @ 4.6A, 10V
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
905 pF @ 75 V4480 pF @ 75 V
Power Dissipation (Max)
2.5W (Ta), 69W (Tc)2.7W (Ta), 113W (Tc)
Stocking Options
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-PQFN
FDMS86252
MOSFET N-CH 150V 4.6A/16A 8PQFN
onsemi
1,986
In Stock
1 : ¥18.55000
Cut Tape (CT)
3,000 : ¥8.37042
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
4.6A (Ta), 16A (Tc)
6V, 10V
51mOhm @ 4.6A, 10V
4V @ 250µA
15 nC @ 10 V
±20V
905 pF @ 75 V
-
2.5W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
8-PQFN
FDMS86255
MOSFET N-CH 150V 10A/45A POWER56
onsemi
8,647
In Stock
33,000
Factory
1 : ¥34.23000
Cut Tape (CT)
3,000 : ¥16.67378
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
10A (Ta), 45A (Tc)
6V, 10V
12.4mOhm @ 10A, 10V
4V @ 250µA
63 nC @ 10 V
±20V
4480 pF @ 75 V
-
2.7W (Ta), 113W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.