Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesToshiba Semiconductor and Storage
Series
OptiMOS™U-MOSVIII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
3.5A (Ta)30A (Tc)
Rds On (Max) @ Id, Vgs
31mOhm @ 30A, 10V69mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
2.4V @ 29µA2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
3.2 nC @ 4.5 V31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
430 pF @ 15 V1976 pF @ 25 V
Power Dissipation (Max)
1.25W (Ta)57W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)150°C
Supplier Device Package
6-UDFNB (2x2)PG-TO252-3-11
Package / Case
6-WDFN Exposed PadTO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
23,656
In Stock
1 : ¥5.58000
Cut Tape (CT)
3,000 : ¥1.29842
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
3.5A (Ta)
4.5V, 10V
69mOhm @ 2A, 10V
2.5V @ 100µA
3.2 nC @ 4.5 V
±20V
430 pF @ 15 V
-
1.25W (Ta)
150°C
Surface Mount
6-UDFNB (2x2)
6-WDFN Exposed Pad
TO252-3
IPD30N10S3L34ATMA1
MOSFET N-CH 100V 30A TO252-3
Infineon Technologies
35,453
In Stock
1 : ¥11.33000
Cut Tape (CT)
2,500 : ¥4.68340
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
30A (Tc)
4.5V, 10V
31mOhm @ 30A, 10V
2.4V @ 29µA
31 nC @ 10 V
±20V
1976 pF @ 25 V
-
57W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-11
TO-252-3, DPAK (2 Leads + Tab), SC-63
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of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.