Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

DMN2056U-7 MOSFET N-CHANNEL 20V 4A SOT23-3 Diodes Incorporated	105,461 In Stock	1 : ¥3.12000 Cut Tape (CT) 3,000 : ¥0.69704 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	4A (Ta)	1.5V, 4.5V	38mOhm @ 3.6A, 4.5V	1V @ 250µA	4.3 nC @ 4.5 V	±8V	339 pF @ 10 V	-	940mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
BSZ120P03NS3GATMA1 MOSFET P-CH 30V 11A/40A 8TSDSON Infineon Technologies	36,461 In Stock	1 : ¥6.24000 Cut Tape (CT) 5,000 : ¥2.25673 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	11A (Ta), 40A (Tc)	6V, 10V	12mOhm @ 20A, 10V	3.1V @ 73µA	45 nC @ 10 V	±25V	3360 pF @ 15 V	-	2.1W (Ta), 52W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
TPH2R506PL,L1Q MOSFET N-CH 60V 100A 8SOP Toshiba Semiconductor and Storage	56,195 In Stock	1 : ¥17.40000 Cut Tape (CT) 5,000 : ¥4.83352 Tape & Reel (TR)	U-MOSIX-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	100A (Tc)	4.5V, 10V	4.4mOhm @ 30A, 4.5V	2.5V @ 500µA	60 nC @ 10 V	±20V	5435 pF @ 30 V	-	132W (Tc)	175°C (TJ)	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.