Single FETs, MOSFETs

Results: 6
Manufacturer
Infineon TechnologiesNexperia USA Inc.Toshiba Semiconductor and StorageVishay Siliconix
Series
OptiMOS™TrenchFET®TrenchMOS™U-MOSIIIU-MOSVII
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V80 V
Current - Continuous Drain (Id) @ 25°C
250mA (Ta)1A (Ta)2.7A (Tc)3.7A (Ta)82A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V1.8V, 4.5V4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
6.1mOhm @ 41A, 10V39mOhm @ 4.7A, 4.5V190mOhm @ 1.9A, 10V270mOhm @ 1A, 4.5V1.1Ohm @ 150mA, 4.5V1.4Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 100µA1V @ 250µA1.25V @ 250µA3V @ 250µA3.8V @ 41µA
Gate Charge (Qg) (Max) @ Vgs
0.34 nC @ 4.5 V1.2 nC @ 4.5 V8 nC @ 10 V19 nC @ 4.5 V33 nC @ 10 V
Vgs (Max)
±8V±10V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
36 pF @ 10 V42 pF @ 10 V79.3 pF @ 15 V155 pF @ 15 V1020 pF @ 10 V2500 pF @ 40 V
Power Dissipation (Max)
150mW (Ta)330mW (Ta), 2.1W (Tc)500mW (Ta)750mW (Ta)2.3W (Tc)2.5W (Ta), 74W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C150°C (TJ)
Supplier Device Package
PG-TDSON-8-7SOT-23-3 (TO-236)TO-236ABVESM
Package / Case
8-PowerTDFNSOT-723TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SI2323DS-T1-E3
MOSFET P-CH 20V 3.7A SOT23-3
Vishay Siliconix
41,549
In Stock
1 : ¥5.83000
Cut Tape (CT)
3,000 : ¥2.20368
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3.7A (Ta)
1.8V, 4.5V
39mOhm @ 4.7A, 4.5V
1V @ 250µA
19 nC @ 4.5 V
±8V
1020 pF @ 10 V
-
750mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
184,046
In Stock
1 : ¥1.15000
Cut Tape (CT)
8,000 : ¥0.20069
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
250mA (Ta)
1.2V, 4.5V
1.1Ohm @ 150mA, 4.5V
1V @ 100µA
0.34 nC @ 4.5 V
±10V
36 pF @ 10 V
-
500mW (Ta)
150°C (TJ)
Surface Mount
VESM
SOT-723
TO-236AB
BSH103BKR
BSH103BK - 30 V, N-CHANNEL TRENC
Nexperia USA Inc.
17,443
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.57291
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
1A (Ta)
1.8V, 4.5V
270mOhm @ 1A, 4.5V
1.25V @ 250µA
1.2 nC @ 4.5 V
±12V
79.3 pF @ 15 V
-
330mW (Ta), 2.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SI2303CDS-T1-E3
MOSFET P-CH 30V 2.7A SOT23-3
Vishay Siliconix
8,756
In Stock
1 : ¥4.02000
Cut Tape (CT)
3,000 : ¥1.34537
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
2.7A (Tc)
4.5V, 10V
190mOhm @ 1.9A, 10V
3V @ 250µA
8 nC @ 10 V
±20V
155 pF @ 15 V
-
2.3W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
11,486
In Stock
1 : ¥16.01000
Cut Tape (CT)
5,000 : ¥6.96149
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
82A (Tc)
6V, 10V
6.1mOhm @ 41A, 10V
3.8V @ 41µA
33 nC @ 10 V
±20V
2500 pF @ 40 V
-
2.5W (Ta), 74W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
0
In Stock
Check Lead Time
1 : ¥1.72000
Cut Tape (CT)
8,000 : ¥0.28986
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
250mA (Ta)
1.2V, 4.5V
1.4Ohm @ 150mA, 4.5V
1V @ 100µA
-
±10V
42 pF @ 10 V
-
150mW (Ta)
150°C
Surface Mount
VESM
SOT-723
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.