Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedToshiba Semiconductor and StorageVishay Siliconix
Series
-U-MOSVII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
60 V100 V500 V
Current - Continuous Drain (Id) @ 25°C
400mA (Ta)12A (Tc)19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
140mOhm @ 5A, 10V184mOhm @ 10A, 10V1.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
2.1V @ 250µA3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.6 nC @ 4.5 V9.7 nC @ 10 V92 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 10 V1167 pF @ 25 V1640 pF @ 100 V
Power Dissipation (Max)
150mW (Ta)34W (Tc)42W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C
Mounting Type
Surface MountThrough Hole
Supplier Device Package
TO-220 Full PackTO-252-3USM
Package / Case
SC-70, SOT-323TO-220-3 Full PackTO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-252-2
DMN10H170SK3-13
MOSFET N-CH 100V 12A TO252-3
Diodes Incorporated
133,952
In Stock
237,500
Factory
1 : ¥3.45000
Cut Tape (CT)
2,500 : ¥1.61631
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
12A (Tc)
4.5V, 10V
140mOhm @ 5A, 10V
3V @ 250µA
9.7 nC @ 10 V
±20V
1167 pF @ 25 V
-
42W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
25,841
In Stock
1 : ¥1.31000
Cut Tape (CT)
3,000 : ¥0.26375
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
400mA (Ta)
4.5V, 10V
1.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.6 nC @ 4.5 V
±20V
40 pF @ 10 V
-
150mW (Ta)
150°C
Surface Mount
USM
SC-70, SOT-323
TO-220-3 Full Pack
SIHA20N50E-E3
MOSFET N-CH 500V 19A TO220
Vishay Siliconix
496
In Stock
1 : ¥23.23000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
19A (Tc)
10V
184mOhm @ 10A, 10V
4V @ 250µA
92 nC @ 10 V
±30V
1640 pF @ 100 V
-
34W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220 Full Pack
TO-220-3 Full Pack
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.