Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesonsemiTexas Instruments
Series
-NexFET™OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
25 V60 V
Current - Continuous Drain (Id) @ 25°C
220mA (Ta)23A (Ta), 100A (Tc)50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
2.8mOhm @ 50A, 10V13mOhm @ 12A, 10V4Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id
1.06V @ 250µA2.2V @ 93µA3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V18 nC @ 10 V175 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
9.5 pF @ 10 V1480 pF @ 30 V13000 pF @ 30 V
Power Dissipation (Max)
350mW (Ta)2.5W (Ta), 139W (Tc)3.2W (Ta), 75W (Tc)
Supplier Device Package
8-VSONP (5x6)PG-TDSON-8-1SOT-23-3
Package / Case
8-PowerTDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
FDV301N
MOSFET N-CH 25V 220MA SOT23
onsemi
280,171
In Stock
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥0.45078
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
220mA (Ta)
2.7V, 4.5V
4Ohm @ 400mA, 4.5V
1.06V @ 250µA
0.7 nC @ 4.5 V
±8V
9.5 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
PG-TDSON-8-1
BSC028N06LS3GATMA1
MOSFET N-CH 60V 23A/100A TDSON
Infineon Technologies
8,093
In Stock
1 : ¥22.00000
Cut Tape (CT)
5,000 : ¥9.55193
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
23A (Ta), 100A (Tc)
4.5V, 10V
2.8mOhm @ 50A, 10V
2.2V @ 93µA
175 nC @ 10 V
±20V
13000 pF @ 30 V
-
2.5W (Ta), 139W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
8-Power TDFN
CSD18537NQ5A
MOSFET N-CH 60V 50A 8VSON
Texas Instruments
15,345
In Stock
1 : ¥7.22000
Cut Tape (CT)
2,500 : ¥2.98852
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
50A (Tc)
6V, 10V
13mOhm @ 12A, 10V
3.5V @ 250µA
18 nC @ 10 V
±20V
1480 pF @ 30 V
-
3.2W (Ta), 75W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSONP (5x6)
8-PowerTDFN
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of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.