Single FETs, MOSFETs

Results: 2
Manufacturer
STMicroelectronicsTexas Instruments
Series
DeepGATE™, STripFET™ VIINexFET™
Current - Continuous Drain (Id) @ 25°C
150A (Ta)180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V10V
Rds On (Max) @ Id, Vgs
2.7mOhm @ 100A, 10V2.7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
3.2V @ 250µA3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
153 nC @ 10 V180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
12000 pF @ 50 V12800 pF @ 25 V
Power Dissipation (Max)
315W (Tc)375W (Tc)
Supplier Device Package
TO-220TO-220-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220-3
CSD19536KCS
MOSFET N-CH 100V 150A TO220-3
Texas Instruments
1,537
In Stock
1 : ¥36.29000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
150A (Ta)
6V, 10V
2.7mOhm @ 100A, 10V
3.2V @ 250µA
153 nC @ 10 V
±20V
12000 pF @ 50 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
TO-220-3
STP310N10F7
MOSFET N CH 100V 180A TO-220
STMicroelectronics
633
In Stock
1 : ¥36.78000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
180A (Tc)
10V
2.7mOhm @ 60A, 10V
3.8V @ 250µA
180 nC @ 10 V
±20V
12800 pF @ 25 V
-
315W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220
TO-220-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.