Single FETs, MOSFETs

Results: 2
Manufacturer
Good-Ark SemiconductorToshiba Semiconductor and Storage
Series
-U-MOSVII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
400mA (Ta)140A (Tc)
Rds On (Max) @ Id, Vgs
4.6mOhm @ 50A, 10V1.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
2.1V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.6 nC @ 4.5 V420 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 10 V24000 pF @ 25 V
Power Dissipation (Max)
320mW (Ta)183W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SOT-23-3TO-263 (D2PAK)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
265,733
In Stock
1 : ¥1.23000
Cut Tape (CT)
3,000 : ¥0.23206
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
400mA (Ta)
4.5V, 10V
1.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.6 nC @ 4.5 V
±20V
40 pF @ 10 V
-
320mW (Ta)
150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
GSFT06130
GSFT06130
MOSFET, P-CH, SINGLE, -140A, -60
Good-Ark Semiconductor
2,974
In Stock
1 : ¥30.87000
Cut Tape (CT)
800 : ¥11.43719
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
140A (Tc)
4.5V, 10V
4.6mOhm @ 50A, 10V
2.5V @ 250µA
420 nC @ 10 V
±20V
24000 pF @ 25 V
-
183W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.