Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
500mA (Ta)3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.8V, 8V
Rds On (Max) @ Id, Vgs
76mOhm @ 400mA, 4.5V1190mOhm @ 100mA, 8V
Vgs(th) (Max) @ Id
1.05V @ 250µA1.35V @ 2.5µA
Gate Charge (Qg) (Max) @ Vgs
0.281 nC @ 10 V1.33 nC @ 4.5 V
Vgs (Max)
-20V10V
Input Capacitance (Ciss) (Max) @ Vds
10.5 pF @ 10 V385 pF @ 10 V
Supplier Device Package
3-LGA (0.73x0.64)3-PICOSTAR
Package / Case
3-XFDFN3-XFLGA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
CSDxxxxxF3x
CSD15380F3
MOSFET N-CH 20V 500MA 3PICOSTAR
Texas Instruments
37,745
In Stock
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.52672
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
500mA (Ta)
2.8V, 8V
1190mOhm @ 100mA, 8V
1.35V @ 2.5µA
0.281 nC @ 10 V
10V
10.5 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
3-PICOSTAR
3-XFDFN
3-LGA
CSD25501F3
MOSFET P-CH 20V 3.6A 3LGA
Texas Instruments
3,463
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.66735
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3.6A (Ta)
1.8V, 4.5V
76mOhm @ 400mA, 4.5V
1.05V @ 250µA
1.33 nC @ 4.5 V
-20V
385 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
3-LGA (0.73x0.64)
3-XFLGA
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.