Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesMicro Commercial Co
Series
-OptiMOS™ 5
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V80 V
Current - Continuous Drain (Id) @ 25°C
3A100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
2.5mOhm @ 50A, 10V70mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250µA2.3V @ 115µA
Gate Charge (Qg) (Max) @ Vgs
3.6 nC @ 4.5 V55 nC @ 4.5 V
Vgs (Max)
±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
220 pF @ 10 V7500 pF @ 40 V
Power Dissipation (Max)
200mW2.5W (Ta), 156W (Tc)
Supplier Device Package
PG-TDSON-8-7SOT-323
Package / Case
8-PowerTDFNSC-70, SOT-323
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSC025N08LS5ATMA1
MOSFET N-CH 80V 100A TDSON-8-7
Infineon Technologies
7,600
In Stock
1 : ¥29.88000
Cut Tape (CT)
5,000 : ¥13.60005
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
100A (Tc)
4.5V, 10V
2.5mOhm @ 50A, 10V
2.3V @ 115µA
55 nC @ 4.5 V
±20V
7500 pF @ 40 V
-
2.5W (Ta), 156W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
0
In Stock
Check Lead Time
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥0.48134
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
3A
2.5V, 4.5V
70mOhm @ 2.5A, 4.5V
1.1V @ 250µA
3.6 nC @ 4.5 V
±10V
220 pF @ 10 V
-
200mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.