Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

AO4421 MOSFET P-CH 60V 6.2A 8SOIC Alpha & Omega Semiconductor Inc.	322,813 In Stock	1 : ¥4.68000 Cut Tape (CT) 3,000 : ¥2.19612 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	6.2A (Ta)	4.5V, 10V	40mOhm @ 6.2A, 10V	3V @ 250µA	55 nC @ 10 V	±20V	2900 pF @ 30 V	-	3.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
LND150N8-G MOSFET N-CH 500V 30MA SOT89-3 Microchip Technology	38,716 In Stock	1 : ¥6.49000 Cut Tape (CT) 2,000 : ¥4.92589 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	500 V	30mA (Tj)	0V	1000Ohm @ 500µA, 0V	-	-	±20V	10 pF @ 25 V	Depletion Mode	1.6W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-89-3	TO-243AA
AON6312 MOSFET N-CHANNEL 30V 85A 8DFN Alpha & Omega Semiconductor Inc.	1,113 In Stock	1 : ¥8.54000 Cut Tape (CT) 3,000 : ¥3.54267 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	85A (Tc)	4.5V, 10V	1.85mOhm @ 20A, 10V	2.2V @ 250µA	65 nC @ 10 V	±20V	3100 pF @ 15 V	-	50W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.