Single FETs, MOSFETs

Results: 2
Manufacturer
Nexperia USA Inc.STMicroelectronics
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
60 V650 V
Current - Continuous Drain (Id) @ 25°C
360mA (Ta)33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V18V
Rds On (Max) @ Id, Vgs
105mOhm @ 20A, 18V1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
0.8 nC @ 4.5 V63 nC @ 18 V
Vgs (Max)
±20V+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V1230 pF @ 800 V
Power Dissipation (Max)
350mW (Ta)250W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
H2PAK-7TO-236AB
Package / Case
TO-236-3, SC-59, SOT-23-3TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
2N7002P,215
MOSFET N-CH 60V 360MA TO236AB
Nexperia USA Inc.
442,205
In Stock
1 : ¥1.97000
Cut Tape (CT)
3,000 : ¥0.32700
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
60 V
360mA (Ta)
10V
1.6Ohm @ 500mA, 10V
2.4V @ 250µA
0.8 nC @ 4.5 V
±20V
50 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
H2PAK-7
SCTH40N120G2V7AG
SICFET N-CH 650V 33A H2PAK-7
STMicroelectronics
0
In Stock
Check Lead Time
1 : ¥140.14000
Cut Tape (CT)
1,000 : ¥88.77721
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
33A (Tc)
18V
105mOhm @ 20A, 18V
5V @ 1mA
63 nC @ 18 V
+22V, -10V
1230 pF @ 800 V
-
250W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
H2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.