Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

NTBG015N065SC1 SILICON CARBIDE MOSFET, NCHANNEL onsemi	1,109 In Stock 7,200 Factory	1 : ¥223.31000 Cut Tape (CT) 800 : ¥148.07511 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	145A (Tc)	15V, 18V	18mOhm @ 75A, 18V	4.3V @ 25mA	283 nC @ 18 V	+22V, -8V	4689 pF @ 325 V	-	500W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
MSC015SMA070B4 TRANS SJT N-CH 700V 140A TO247-4 Microchip Technology	27 In Stock	1 : ¥302.45000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	700 V	140A (Tc)	20V	19mOhm @ 40A, 20V	2.4V @ 4mA	215 nC @ 20 V	+23V, -10V	4500 pF @ 700 V	-	455W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.