Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SIDR870ADP-T1-GE3 MOSFET N-CH 100V 95A PPAK SO-8DC Vishay Siliconix	19,694 In Stock	1 : ¥16.17000 Cut Tape (CT) 3,000 : ¥7.29518 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	95A (Tc)	4.5V, 10V	6.6mOhm @ 20A, 10V	3V @ 250µA	80 nC @ 10 V	±20V	2866 pF @ 50 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8DC	PowerPAK® SO-8
SIDR5802EP-T1-RE3 N-CHANNEL 80 V (D-S) 175C MOSFET Vishay Siliconix	2,328 In Stock	1 : ¥22.66000 Cut Tape (CT) 3,000 : ¥10.23421 Tape & Reel (TR)	TrenchFET® Gen V	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	34.2A (Ta), 153A (Tc)	7.5V, 10V	2.9mOhm @ 20A, 10V	4V @ 250µA	60 nC @ 10 V	±20V	3020 pF @ 40 V	-	7.5W (Ta), 150W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8DC	PowerPAK® SO-8
SIDR680DP-T1-RE3 N-CHANNEL 80-V (D-S) MOSFET Vishay Siliconix	5,829 In Stock	1 : ¥23.07000 Cut Tape (CT) 3,000 : ¥10.78051 Tape & Reel (TR)	TrenchFET® Gen IV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	32.8A (Ta), 100A (Tc)	7.5V, 10V	2.9mOhm @ 20A, 10V	3.4V @ 250µA	105 nC @ 10 V	±20V	5150 pF @ 40 V	-	6.25W (Ta), 125W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8DC	PowerPAK® SO-8

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.