Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedRohm Semiconductor
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)14A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V1.5V, 4.5V
Rds On (Max) @ Id, Vgs
8mOhm @ 12A, 4.5V3.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 100µA1V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
7.1 pF @ 10 V6909 pF @ 10 V
Power Dissipation (Max)
150mW (Ta)2.4W (Ta), 41W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
POWERDI3333-8VMT3
Package / Case
8-PowerVDFNSOT-723
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
VMT3 Pkg
RUM001L02T2CL
MOSFET N-CH 20V 100MA VMT3
Rohm Semiconductor
725,116
In Stock
This product has a maximum purchase limit
1 : ¥2.22000
Cut Tape (CT)
8,000 : ¥0.34654
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
100mA (Ta)
1.2V, 4.5V
3.5Ohm @ 100mA, 4.5V
1V @ 100µA
-
±8V
7.1 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
VMT3
SOT-723
PowerDI3333-8
DMP2008UFG-7
MOSFET P-CH 20V 14A PWRDI3333
Diodes Incorporated
52,572
In Stock
1 : ¥4.60000
Cut Tape (CT)
2,000 : ¥1.55818
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
14A (Ta), 54A (Tc)
1.5V, 4.5V
8mOhm @ 12A, 4.5V
1V @ 250µA
72 nC @ 4.5 V
±8V
6909 pF @ 10 V
-
2.4W (Ta), 41W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.