Single FETs, MOSFETs

Results: 3
Manufacturer
Alpha & Omega Semiconductor Inc.Diodes IncorporatedToshiba Semiconductor and Storage
Series
-U-MOSIX-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V40 V
Current - Continuous Drain (Id) @ 25°C
4.2A (Ta)24A (Tc)48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
9.7mOhm @ 15A, 4.5V16.5mOhm @ 12A, 10V52mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA2.3V @ 250µA2.4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
10.2 nC @ 4.5 V24 nC @ 10 V34 nC @ 10 V
Vgs (Max)
±8V±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
808 pF @ 15 V1180 pF @ 15 V2040 pF @ 20 V
Power Dissipation (Max)
1.4W (Ta)4.1W (Ta), 24W (Tc)69W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)175°C (TJ)
Supplier Device Package
8-DFN-EP (3x3)8-SOP Advance (5x5)SOT-23-3
Package / Case
8-PowerVDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
Showing
of 3
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMG2305UX-7
MOSFET P-CH 20V 4.2A SOT23
Diodes Incorporated
162,164
In Stock
2,514,000
Factory
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.52630
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4.2A (Ta)
1.8V, 4.5V
52mOhm @ 4.2A, 4.5V
900mV @ 250µA
10.2 nC @ 4.5 V
±8V
808 pF @ 15 V
-
1.4W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
249,018
In Stock
1 : ¥3.61000
Cut Tape (CT)
5,000 : ¥1.16087
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
24A (Tc)
4.5V, 10V
16.5mOhm @ 12A, 10V
2.3V @ 250µA
34 nC @ 10 V
±25V
1180 pF @ 15 V
-
4.1W (Ta), 24W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN-EP (3x3)
8-PowerVDFN
8,854
In Stock
1 : ¥8.13000
Cut Tape (CT)
3,000 : ¥2.00459
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
48A (Tc)
4.5V, 10V
9.7mOhm @ 15A, 4.5V
2.4V @ 200µA
24 nC @ 10 V
±20V
2040 pF @ 20 V
-
69W (Tc)
175°C (TJ)
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
Showing
of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.