Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveLast Time Buy
Drain to Source Voltage (Vdss)
30 V100 V
Current - Continuous Drain (Id) @ 25°C
5A (Ta)8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
19.5mOhm @ 5A, 10V34mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V33 nC @ 10 V
Power Dissipation (Max)
1.9W (Ta)2W (Ta), 4.1W (Tc)
Supplier Device Package
6-TSOPPowerPAK® SO-8
Package / Case
PowerPAK® SO-8SOT-23-6 Thin, TSOT-23-6
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
Pkg 5540
SI3410DV-T1-GE3
MOSFET N-CH 30V 8A 6TSOP
Vishay Siliconix
7,849
In Stock
1 : ¥6.57000
Cut Tape (CT)
3,000 : ¥2.48136
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
8A (Tc)
4.5V, 10V
19.5mOhm @ 5A, 10V
3V @ 250µA
33 nC @ 10 V
±20V
1295 pF @ 15 V
-
2W (Ta), 4.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
PowerPAK SO-8
SI7454DP-T1-GE3
MOSFET N-CH 100V 5A PPAK SO-8
Vishay Siliconix
3,000
In Stock
1 : ¥18.55000
Cut Tape (CT)
3,000 : ¥8.38144
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
100 V
5A (Ta)
6V, 10V
34mOhm @ 7.8A, 10V
4V @ 250µA
30 nC @ 10 V
±20V
-
-
1.9W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.