Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedNexperia USA Inc.
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
3.8A (Ta)5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
32.5mOhm @ 5A, 4.5V65mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
900mV @ 250µA2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.2 nC @ 4.5 V45 nC @ 4.5 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
563 pF @ 25 V2970 pF @ 10 V
Power Dissipation (Max)
1.08W (Ta)1.7W (Ta), 12.5W (Tc)
Supplier Device Package
DFN2020MD-6SOT-23-3
Package / Case
6-UDFN Exposed PadTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMP3099L-7
MOSFET P-CH 30V 3.8A SOT23
Diodes Incorporated
289,607
In Stock
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥0.49040
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
3.8A (Ta)
4.5V, 10V
65mOhm @ 3.8A, 10V
2.1V @ 250µA
5.2 nC @ 4.5 V
±20V
563 pF @ 25 V
-
1.08W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
6-DFN2020MD_View 2
PMPB29XPE,115
MOSFET P-CH 20V 5A DFN2020MD-6
Nexperia USA Inc.
14,115
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.94823
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
5A (Ta)
1.8V, 4.5V
32.5mOhm @ 5A, 4.5V
900mV @ 250µA
45 nC @ 4.5 V
±12V
2970 pF @ 10 V
-
1.7W (Ta), 12.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DFN2020MD-6
6-UDFN Exposed Pad
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of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.