Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedInfineon TechnologiesNexperia USA Inc.
Series
-OptiMOS™OptiMOS™ 5TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V100 V
Current - Continuous Drain (Id) @ 25°C
9.4A (Tc)27A (Tc)40A (Tc)85A (Tc)90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V6V, 10V10V
Rds On (Max) @ Id, Vgs
7mOhm @ 50A, 10V12mOhm @ 25A, 5V14.6mOhm @ 20A, 10V25mOhm @ 7A, 10V153mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
2.1V @ 1mA2.3V @ 23µA2.4V @ 250µA3.5V @ 75µA4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
3.2 nC @ 4.5 V9.4 nC @ 10 V22 nC @ 10 V55 nC @ 10 V64 nC @ 5 V
Vgs (Max)
±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
497 pF @ 25 V1241 pF @ 15 V1300 pF @ 50 V4000 pF @ 50 V7973 pF @ 25 V
Power Dissipation (Max)
1.6W (Ta)37.3W (Tc)52W (Tc)114W (Tc)238W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
LFPAK56, Power-SO8PG-TDSON-8-1PG-TSDSON-8-FLTO-252-3
Package / Case
8-PowerTDFNSC-100, SOT-669TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TSDSON-8
BSZ146N10LS5ATMA1
MOSFET N-CH 100V 40A TSDSON
Infineon Technologies
22,702
In Stock
1 : ¥12.15000
Cut Tape (CT)
5,000 : ¥4.77208
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
40A (Tc)
4.5V, 10V
14.6mOhm @ 20A, 10V
2.3V @ 23µA
3.2 nC @ 4.5 V
±20V
1300 pF @ 50 V
-
52W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
PG-TDSON-8-1
BSC070N10NS3GATMA1
MOSFET N-CH 100V 90A TDSON-8
Infineon Technologies
15,723
In Stock
1 : ¥16.26000
Cut Tape (CT)
5,000 : ¥7.05170
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
90A (Tc)
6V, 10V
7mOhm @ 50A, 10V
3.5V @ 75µA
55 nC @ 10 V
±20V
4000 pF @ 50 V
-
114W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
TO-252-2
DMP3028LK3-13
MOSFET P-CH 30V 27A TO252
Diodes Incorporated
10,330
In Stock
292,500
Factory
1 : ¥4.76000
Cut Tape (CT)
2,500 : ¥1.80573
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
27A (Tc)
4.5V, 10V
25mOhm @ 7A, 10V
2.4V @ 250µA
22 nC @ 10 V
±20V
1241 pF @ 15 V
-
1.6W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
LFPAK56/POWER-SO8/SOT669
BUK9Y12-100E,115
MOSFET N-CH 100V 85A LFPAK56
Nexperia USA Inc.
7,246
In Stock
1 : ¥15.02000
Cut Tape (CT)
1,500 : ¥7.14904
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
85A (Tc)
5V
12mOhm @ 25A, 5V
2.1V @ 1mA
64 nC @ 5 V
±10V
7973 pF @ 25 V
-
238W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
LFPAK56/POWER-SO8/SOT669
BUK7Y153-100EX
MOSFET N-CH 100V 9.4A LFPAK56
Nexperia USA Inc.
2,696
In Stock
1 : ¥5.09000
Cut Tape (CT)
1,500 : ¥2.17451
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
9.4A (Tc)
10V
153mOhm @ 2A, 10V
4V @ 1mA
9.4 nC @ 10 V
±20V
497 pF @ 25 V
-
37.3W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.