Single FETs, MOSFETs

Results: 3

Filters

Stacked

Scrolling

Showing

of 3

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

DMN10H220L-7 MOSFET N-CH 100V 1.4A SOT23 Diodes Incorporated	107,785 In Stock	1 : ¥3.37000 Cut Tape (CT) 3,000 : ¥1.12975 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	1.4A (Ta)	4.5V, 10V	220mOhm @ 1.6A, 10V	2.5V @ 250µA	8.3 nC @ 10 V	±16V	401 pF @ 25 V	-	1.3W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
BSC190N12NS3GATMA1 MOSFET N-CH 120V 8.6A/44A TDSON Infineon Technologies	21,132 In Stock	1 : ¥11.33000 Cut Tape (CT) 5,000 : ¥4.47671 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	120 V	8.6A (Ta), 44A (Tc)	10V	19mOhm @ 39A, 10V	4V @ 42µA	34 nC @ 10 V	±20V	2300 pF @ 60 V	-	69W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TDSON-8-1	8-PowerTDFN
IPB020N10N5LFATMA1 MOSFET N-CH 100V 176A TO263-3 Infineon Technologies	0 In Stock Check Lead Time	1 : ¥60.01000 Cut Tape (CT) 1,000 : ¥34.05008 Tape & Reel (TR)	OptiMOS™-5	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	176A (Tc)	10V	2mOhm @ 100A, 10V	4.1V @ 270µA	195 nC @ 10 V	±20V	840 pF @ 50 V	-	313W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Showing

of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.