Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedNexperia USA Inc.
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V20 V
Current - Continuous Drain (Id) @ 25°C
2.8A (Ta)26A (Tc)
Rds On (Max) @ Id, Vgs
8.5mOhm @ 5A, 4.5V73mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 10 V47 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds
291 pF @ 10 V2475 pF @ 6 V
Power Dissipation (Max)
490mW (Ta)2.1W (Ta)
Supplier Device Package
TO-236ABU-DFN2020-6 (Type F)
Package / Case
6-UDFN Exposed PadTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
U-DFN2020-6 Type F
DMP1005UFDF-7
MOSFET P-CH 12V 26A 6UDFN
Diodes Incorporated
3,281
In Stock
1 : ¥4.35000
Cut Tape (CT)
3,000 : ¥1.30541
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
26A (Tc)
1.8V, 4.5V
8.5mOhm @ 5A, 4.5V
1V @ 250µA
47 nC @ 8 V
±8V
2475 pF @ 6 V
-
2.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
TO-236AB
PMV65UNER
MOSFET N-CH 20V 2.8A TO236AB
Nexperia USA Inc.
6,072
In Stock
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.66535
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
2.8A (Ta)
1.8V, 4.5V
73mOhm @ 2.8A, 4.5V
1V @ 250µA
6 nC @ 10 V
±8V
291 pF @ 10 V
-
490mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
Showing
of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.