Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

SQJ476EP-T1_GE3 MOSFET N-CH 100V 23A PPAK SO-8 Vishay Siliconix	22,470 In Stock	1 : ¥7.47000 Cut Tape (CT) 3,000 : ¥2.83110 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	23A (Tc)	4.5V, 10V	38mOhm @ 10A, 10V	2.5V @ 250µA	20 nC @ 10 V	±20V	700 pF @ 25 V	-	45W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SIR165DP-T1-GE3 MOSFET P-CH 30V 60A PPAK SO-8 Vishay Siliconix	14,013 In Stock	1 : ¥12.89000 Cut Tape (CT) 3,000 : ¥5.34798 Tape & Reel (TR)	TrenchFET® Gen III	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	60A (Tc)	4.5V, 10V	4.6mOhm @ 15A, 10V	2.3V @ 250µA	138 nC @ 10 V	±20V	4930 pF @ 15 V	-	69.4W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
NVMFS5C680NLT1G MOSFET N-CH 60V 8.1A/21A 5DFN onsemi	1,041 In Stock	1 : ¥8.46000 Cut Tape (CT) 1,500 : ¥3.71280 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	8.1A (Ta), 21A (Tc)	4.5V, 10V	27.5mOhm @ 7.5A, 10V	2.2V @ 13µA	5.8 nC @ 10 V	±20V	330 pF @ 25 V	-	3.4W (Ta), 24W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.