Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesNexperia USA Inc.onsemi
Series
-OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V40 V
Current - Continuous Drain (Id) @ 25°C
3.7A (Ta)17A (Ta), 52A (Tc)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
2.04mOhm @ 50A, 10V7.3mOhm @ 10A, 10V44mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA2V @ 30µA2V @ 32µA
Gate Charge (Qg) (Max) @ Vgs
1.8 nC @ 10 V12 nC @ 4.5 V46 nC @ 10 V
Vgs (Max)
±12V±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
635 pF @ 15 V860 pF @ 25 V2744 pF @ 25 V
Power Dissipation (Max)
490mW (Ta)3.8W (Ta), 38W (Tc)75W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
LFPAK4 (5x6)PG-TDSON-8TO-236AB
Package / Case
8-PowerTDFNSOT-1023, 4-LFPAKTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
PMV40UN2R
MOSFET N-CH 30V 3.7A TO236AB
Nexperia USA Inc.
403,610
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.72353
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
3.7A (Ta)
1.8V, 4.5V
44mOhm @ 3.7A, 4.5V
900mV @ 250µA
12 nC @ 4.5 V
±12V
635 pF @ 15 V
-
490mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT 1023
NVMYS7D3N04CLTWG
MOSFET N-CH 40V 17A/52A 4LFPAK
onsemi
6,309
In Stock
21,000
Factory
1 : ¥7.72000
Cut Tape (CT)
3,000 : ¥3.18830
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
17A (Ta), 52A (Tc)
4.5V, 10V
7.3mOhm @ 10A, 10V
2V @ 30µA
1.8 nC @ 10 V
±20V
860 pF @ 25 V
-
3.8W (Ta), 38W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK4 (5x6)
SOT-1023, 4-LFPAK
14,910
In Stock
1 : ¥10.59000
Cut Tape (CT)
5,000 : ¥4.18028
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
100A (Tc)
4.5V, 10V
2.04mOhm @ 50A, 10V
2V @ 32µA
46 nC @ 10 V
±16V
2744 pF @ 25 V
-
75W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TDSON-8
8-PowerTDFN
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.