Single FETs, MOSFETs

Results: 5
Manufacturer
Infineon TechnologiesToshiba Semiconductor and StorageTransphorm
Series
HEXFET®OptiMOS™OptiMOS™ 7SuperGaN™U-MOSVIII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V100 V200 V650 V
Current - Continuous Drain (Id) @ 25°C
33A (Ta)65A (Tc)93A (Tc)120A (Tc)175A
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V7V, 10V10V
Rds On (Max) @ Id, Vgs
0.44mOhm @ 88A, 10V2.7mOhm @ 100A, 10V18mOhm @ 60A, 10V25mOhm @ 46A, 10V29mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id
3V @ 130µA3.8V @ 184µA4V @ 1mA4.8V @ 2mA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V98 nC @ 10 V100 nC @ 10 V139 nC @ 10 V169 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
2200 pF @ 100 V4600 pF @ 25 V5218 pF @ 400 V10300 pF @ 50 V11310 pF @ 20 V
Power Dissipation (Max)
78W (Tc)219W (Tc)250W (Tc)266W (Tc)330W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 175°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
8-SOP Advance (5x5)PG-TDSON-8-53PG-TO263-3TO-247-3TO-247AC
Package / Case
8-PowerTDFN8-PowerVDFNTO-247-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
16,925
In Stock
1 : ¥19.79000
Cut Tape (CT)
5,000 : ¥8.58885
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
33A (Ta)
10V
29mOhm @ 16.5A, 10V
4V @ 1mA
22 nC @ 10 V
±20V
2200 pF @ 100 V
-
78W (Tc)
150°C (TJ)
-
-
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
5,269
In Stock
1 : ¥27.17000
Cut Tape (CT)
5,000 : ¥12.68415
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
175A
7V, 10V
0.44mOhm @ 88A, 10V
3V @ 130µA
169 nC @ 10 V
±20V
11310 pF @ 20 V
-
219W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TDSON-8-53
8-PowerTDFN
TO-247-3 AC EP
IRFP4227PBF
MOSFET N-CH 200V 65A TO247AC
Infineon Technologies
3,507
In Stock
1 : ¥34.97000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
65A (Tc)
10V
25mOhm @ 46A, 10V
5V @ 250µA
98 nC @ 10 V
±30V
4600 pF @ 25 V
-
330W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247AC
TO-247-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB027N10N5ATMA1
MOSFET N-CH 100V 120A D2PAK
Infineon Technologies
2,302
In Stock
1 : ¥39.74000
Cut Tape (CT)
1,000 : ¥20.55686
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
120A (Tc)
6V, 10V
2.7mOhm @ 100A, 10V
3.8V @ 184µA
139 nC @ 10 V
±20V
10300 pF @ 50 V
-
250W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TP65H015G5WS
TP65H015G5WS
650 V 95 A GAN FET
Transphorm
189
In Stock
1 : ¥264.85000
Tube
Tube
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
93A (Tc)
10V
18mOhm @ 60A, 10V
4.8V @ 2mA
100 nC @ 10 V
±20V
5218 pF @ 400 V
-
266W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.