Single FETs, MOSFETs

Results: 5
Manufacturer
Rohm SemiconductorToshiba Semiconductor and Storage
Technology
SiC (Silicon Carbide Junction Transistor)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V1200 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)39A (Tj)40A (Tc)58A (Tc)60A (Tc)
Rds On (Max) @ Id, Vgs
37mOhm @ 29A, 18V41mOhm @ 30A, 18V62mOhm @ 20A, 18V78mOhm @ 13A, 18V113mOhm @ 15A, 18V
Vgs(th) (Max) @ Id
5V @ 13mA5V @ 3mA5V @ 6.7mA5V @ 600µA5.6V @ 6.67mA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 18 V57 nC @ 18 V58 nC @ 18 V65 nC @ 18 V82 nC @ 18 V
Vgs (Max)
+22V, -4V+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
852 pF @ 500 V873 pF @ 400 V1969 pF @ 800 V2288 pF @ 400 V2925 pF @ 800 V
Power Dissipation (Max)
111W (Tc)156W (Tc)165W182W (Tc)249W (Tc)
Operating Temperature
175°C175°C (TJ)
Supplier Device Package
TO-247TO-247-4LTO-247-4L(X)
Package / Case
TO-247-3TO-247-4
Stocking Options
Environmental Options
Media
Marketplace Product
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Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TW015N65C,S1F
TW083N65C,S1F
G3 650V SIC-MOSFET TO-247 83MOH
Toshiba Semiconductor and Storage
142
In Stock
1 : ¥82.26000
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SiCFET (Silicon Carbide)
650 V
30A (Tc)
18V
113mOhm @ 15A, 18V
5V @ 600µA
28 nC @ 18 V
+25V, -10V
873 pF @ 400 V
-
111W (Tc)
175°C
Through Hole
TO-247
TO-247-3
SCT4026DRHRC15
SCT3060ARC15
650V, 39A, 4-PIN THD, TRENCH-STR
Rohm Semiconductor
435
In Stock
1 : ¥116.49000
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SiC (Silicon Carbide Junction Transistor)
650 V
39A (Tj)
18V
78mOhm @ 13A, 18V
5.6V @ 6.67mA
58 nC @ 18 V
+22V, -4V
852 pF @ 500 V
-
165W
175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
107
In Stock
1 : ¥246.70000
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SiC (Silicon Carbide Junction Transistor)
1200 V
60A (Tc)
18V
41mOhm @ 30A, 18V
5V @ 13mA
82 nC @ 18 V
+25V, -10V
2925 pF @ 800 V
-
249W (Tc)
175°C
Through Hole
TO-247-4L(X)
TO-247-4
TW015N65C,S1F
TW027N65C,S1F
G3 650V SIC-MOSFET TO-247 27MOH
Toshiba Semiconductor and Storage
67
In Stock
1 : ¥189.72000
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N-Channel
SiCFET (Silicon Carbide)
650 V
58A (Tc)
18V
37mOhm @ 29A, 18V
5V @ 3mA
65 nC @ 18 V
+25V, -10V
2288 pF @ 400 V
-
156W (Tc)
175°C
Through Hole
TO-247
TO-247-3
77
In Stock
1 : ¥183.73000
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SiC (Silicon Carbide Junction Transistor)
1200 V
40A (Tc)
18V
62mOhm @ 20A, 18V
5V @ 6.7mA
57 nC @ 18 V
+25V, -10V
1969 pF @ 800 V
-
182W (Tc)
175°C
Through Hole
TO-247-4L(X)
TO-247-4
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.