Single FETs, MOSFETs

Results: 3
Manufacturer
Nexperia USA Inc.Rohm SemiconductorTexas Instruments
Series
-FemtoFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
530mA (Ta)3.6A (Ta)11A (Ta), 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 4.5V
Rds On (Max) @ Id, Vgs
11.7mOhm @ 11A, 4.5V76mOhm @ 400mA, 4.5V1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id
1.05V @ 250µA1.1V @ 250µA1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
0.68 nC @ 4.5 V1.33 nC @ 4.5 V13.5 nC @ 4.5 V
Vgs (Max)
-20V±8V±12V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 15 V385 pF @ 10 V1500 pF @ 15 V
Power Dissipation (Max)
360mW (Ta), 2.7W (Tc)500mW (Ta)2W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
3-LGA (0.73x0.64)8-HSMT (3.2x3)DFN1006B-3
Package / Case
3-XFDFN3-XFLGA8-PowerVDFN
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
3-LGA
CSD25501F3
MOSFET P-CH 20V 3.6A 3LGA
Texas Instruments
18,578
In Stock
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.67444
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3.6A (Ta)
1.8V, 4.5V
76mOhm @ 400mA, 4.5V
1.05V @ 250µA
1.33 nC @ 4.5 V
-20V
385 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
3-LGA (0.73x0.64)
3-XFLGA
3-XQFN
NX3008NBKMB,315
MOSFET N-CH 30V 530MA DFN1006B-3
Nexperia USA Inc.
19,630
In Stock
1 : ¥3.04000
Cut Tape (CT)
10,000 : ¥0.39665
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
30 V
530mA (Ta)
1.8V, 4.5V
1.4Ohm @ 350mA, 4.5V
1.1V @ 250µA
0.68 nC @ 4.5 V
±8V
50 pF @ 15 V
-
360mW (Ta), 2.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DFN1006B-3
3-XFDFN
8-HSMT
RQ3E110AJTB
MOSFET N-CH 30V 11A/24A 8HSMT
Rohm Semiconductor
13,868
In Stock
1 : ¥5.99000
Cut Tape (CT)
3,000 : ¥2.29229
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
11A (Ta), 24A (Tc)
2.5V, 4.5V
11.7mOhm @ 11A, 4.5V
1.5V @ 1mA
13.5 nC @ 4.5 V
±12V
1500 pF @ 15 V
-
2W (Ta)
150°C (TJ)
Surface Mount
8-HSMT (3.2x3)
8-PowerVDFN
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.