Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedInfineon Technologies
Series
-OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
60 V80 V
Current - Continuous Drain (Id) @ 25°C
6A (Ta)40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
7.5mOhm @ 20A, 10V68mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA3.8V @ 36µA
Gate Charge (Qg) (Max) @ Vgs
10.3 nC @ 10 V29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
502 pF @ 30 V2080 pF @ 40 V
Power Dissipation (Max)
2.12W (Ta)69W (Tc)
Supplier Device Package
PG-TSDSON-8-26TO-252-3
Package / Case
8-PowerTDFNTO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-252-2
DMN6068LK3-13
MOSFET N-CH 60V 6A TO252-3
Diodes Incorporated
25,900
In Stock
735,000
Factory
1 : ¥4.43000
Cut Tape (CT)
2,500 : ¥1.49527
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
6A (Ta)
4.5V, 10V
68mOhm @ 12A, 10V
3V @ 250µA
10.3 nC @ 10 V
±20V
502 pF @ 30 V
-
2.12W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
8-PowerTDFN
BSZ075N08NS5ATMA1
MOSFET N-CH 80V 40A 8TSDSON
Infineon Technologies
65,652
In Stock
1 : ¥8.87000
Cut Tape (CT)
5,000 : ¥5.26864
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
40A (Tc)
6V, 10V
7.5mOhm @ 20A, 10V
3.8V @ 36µA
29.5 nC @ 10 V
±20V
2080 pF @ 40 V
-
69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-26
8-PowerTDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.